Practice Problems for GATE (Topic wise)
Reference Books for Electron Devices:
1. EDC by Millman (Black Pad)
2. EDC by Bogart
3. Microelectronics by Sedra & Smith
4. Solid State Electronic Devices by Streetman
5. Semiconductor Physics & Devices by Donald Neamen
Reference Books for Analog Circuits:
1. Microelectronics by Sedra & Smith
2. Integrated Electronics by Millman (Yellow Pad)
3. EDC by Bogart
4. Electronic Circuit Analysis & Design by Donald Neamen
5. Electronic Circuits by Schilling & Belove
Reference Books for Digital Circuits:
1. Digital Electronics by R.P. Jain
2. Digital Design by Morris Mano
3. Solutions to Digital Electronics by R.P. Jain
4. Digital Systems by Tocci
5. Digital Fundamentals by Floyd
Electron Devices

Analog Circuits

Digital Circuits

BJT Small Signal
Analysis

Number Systems


BJT High Frequency
Analysis

Logic Gates


Zener Diode

FET Amplifiers

Combinational
Circuits

BJT

Multistage
Amplifiers

Multiplexer

Negative Feedback
Amplifiers

Sequential Circuits


MOSFET

Operational
Amplifiers

Memories

VLSI

Power Amplifiers

ADC & DAC

Special Purpose Diodes

Tuned Amplifiers

Microprocessors

Transistor Biasing 
Oscillators

Logic Families 
Reference Books for Electron Devices:
1. EDC by Millman (Black Pad)
2. EDC by Bogart
3. Microelectronics by Sedra & Smith
4. Solid State Electronic Devices by Streetman
5. Semiconductor Physics & Devices by Donald Neamen
Reference Books for Analog Circuits:
1. Microelectronics by Sedra & Smith
2. Integrated Electronics by Millman (Yellow Pad)
3. EDC by Bogart
4. Electronic Circuit Analysis & Design by Donald Neamen
5. Electronic Circuits by Schilling & Belove
Reference Books for Digital Circuits:
1. Digital Electronics by R.P. Jain
2. Digital Design by Morris Mano
3. Solutions to Digital Electronics by R.P. Jain
4. Digital Systems by Tocci
5. Digital Fundamentals by Floyd
check out here for isro previous year question if any one BARC question paper if possible to send me aakashvrm879@gmail.com
ReplyDeletePractice Topicwise Gate ECE Questions from https://academyera.com/gatequestionsforece
ReplyDeleteThank u
DeleteA longchannel nchannel enhancementmode MOSFET has threshold voltage VT= 0.5 V, process transconductance parameter kn′= 0.2 mA/V2.
ReplyDeletea) Sketch the drain current vs. gate voltage (IDS vs. VGS) characteristic for 0 ≤ VGS ≤5 V, VDS= 0.5 V.
b) Sketch the drain current vs. drain voltage (IDS vs. VDS) characteristics for 0 ≤ VDS ≤5 V,
for VGS= 0 V, 1 V, 2, V, 3 V, 4 V, and 5 V.
c) For each set of voltages below, state the region of operation and compute the drain current:
i) VGS= 1 V and VDS= 5 V
ii) VGS= 1 V and VDS= 0.5 V
iii) VGS= 0 V and VDS= 5 V
Sketch the root locus of the following unity feedback system with K G(s) = %3D s(s + 2)(s + 2s + 4) (a) Find the value of K at breakaway points (b) Find the value of K and the closed loop poles at which the damping factor is 0.6.
ReplyDelete(a) Find the K value using 'magnitude condition'
Deletei.e. G(s)H(s) at s=BP (or any point in Root Locus) is equal to 1
(b) This one is a bit complicated to type but cos(theta) =£ theta being angle with ve real axis .This will cut Root Locus at a point which is the required point at which K is to be calculated.
Using formula: K =(product of distances from point to poles)/(distances from point to zeros)