1.
Find the magnitude of the Hall voltage V

_{H}in an N-type silicon bar used in given figure, which has a majority carrier concentration N_{D}= 10^{13}/cm^{3}. Assume B_{z}= 0.2 Wb/m^{2}, d = 5 mm and ε_{x}= 5 V/cm.
2.
Find the magnitude of the Hall voltage V

_{H}in an P-type silicon bar used in given figure, which has a majority carrier concentration N_{A}= 10^{12}/cm^{3}. Assume B_{z}= 0.2 Wb/m^{2}, d = 5 mm and ε_{x}= 5 V/cm.
3.
The Hall effect is used to determine the
mobility of holes in a P-type silicon bar used in figure shown. Assume the bar
resistivity is 2,00,000 Ω-cm, the magnetic field B

_{z}= 0.1 Wb/m^{2}, and d = w = 2 mm. The measured values of the current and Hall voltage are 5 µA and 30 mV. Find mobility of holes.
4.
An N-type silicon bar whose resistivity is 1000 Ω-m
is used in the figure shown, with w = 1 cm. If the current is 10 µA and the
Hall voltage is 40 mV, what is the intensity B

_{z}of the applied magnetic field?
5.
The hole concentration in a semiconductor
specimen is shown below.

a.
Find an expression for and sketch the hole
current density J

_{p}(x) for the case in which there is no externally applied electric field.
b.
Find an expression for and sketch the built in
electric field that must exist, if there is to be no net hole current associated
with the distribution shown.

c.
Find the value of the potential between the
points x = 0 and x = W, if P(0)/ P

_{o}= 10^{3}.
6.
Let the Hall effect could not be observed in a germanium
sample, whose conduction electron mobility is 2.1 times that of holes. Find the
ratio of conduction electron and hole concentrations.

7.
A germanium sample is oriented normal to 0.5
Tesla magnetic field, when a current of 1 mA is passed through it by applying a
potential difference of 400 mV. Calculate Hall voltage, if concentration of
majority carriers = 5.2 x 10

^{19}/m^{3}, L = 2 cm and w = d = 1 cm.
8.
In the Hall effect experiment, a P-type
semiconductor bar of width 1 cm and length of 5 cm is placed in the magnetic
field of 0.5 Tesla. A potential difference of 10 volts is applied across the
edges. Given V

_{H}= 0.05 volts, σ = 2.5 x 10^{-2}Ω-cm.
a.
Determine Hall coefficient, R

_{H}.
b.
Concentration of holes, N

_{A}.
c.
Hole mobility, µ

_{p}.
9.
A P-type silicon semiconductor bar with resistivity 3,00,000 Ω-cm is placed
in a transverse magnetic field of 0.1 Wb/m

^{2}and d = w = 6 mm. If the measured values of current flowing through and Hall voltage are 10 µA and 60 mV respectively, find mobility of holes.
10.
A sample of silicon is doped with 10

^{17}phosphorous atoms/cm^{3}. Find the Hall voltage, if the sample has 100 µm thick, I_{x}= 1 mA and B_{z}= 10^{-5}Wb/m^{2}?
Solutions

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