1. Which of the following is NOT associated with a PN junction?

a. Junction capacitance

b. Charge storage capacitance

c. Depletion capacitance

d. Channel length modulation

2. Which of the following is TRUE?

a. A silicon wafer heavily doped with boron is a P

b. A silicon wafer lightly doped with boron is a P

c. A silicon wafer heavily doped with Arsenic is a P

d. A silicon wafer lightly doped with Arsenic is a P

3. In the following limiter circuit, an input voltage V

The maximum and minimum values of the output voltage respectively are

a. 6.1 volts, -0.7 volts

b. 0.7 volts, -7.5 volts

c. 7.5 volts, -0.7 volts

d. 7.5 volts, -7.5 volts

4. A silicon wafer has 100nm of oxide on it and is inserted in a furnace at a temperature above 1000

a. Is independent of current oxide thickness and temperature

b. Is independent of current oxide thickness but depends on temperature

c. Slows down as the oxide grows

d. Is zero as the existing oxide prevents further oxidation

5. The drain current of a MOSFET in saturation is given by I

6. For the circuit shown in the following figure, transistors M1 and M2 are identical NMOS transistors. Assume that M2 is in saturation and the output is unloaded. The I

7. The measured Transconductance g

8. Two identical NMOS transistors M1 and M2 are connected as shown below. V

a. The sum of individual g

b. The product of individual g

c. Nearly equal to the g

d. Nearly equal to g

9. Silicon is doped with boron to a concentration of 4x10

a. Goes down by 0.13 eV

b. Goes up by 0.13 eV

c. Goes down by 0.427 eV

d. Goes up by 0.427 eV

10. The cross section of a JFET is shown in the figure. Let V

11. Consider the following assertions.

S1: For zener effect to occur, a very abrupt junction is required

S2: For quantum tunneling to occur, a very narrow energy barrier is required.

Which of the following is correct?

a. Only S2 is true

b. Both are true but S2 is not a reason for S1

c. Both are true but S2 is a reason for S1

d. Both are false

a. Junction capacitance

b. Charge storage capacitance

c. Depletion capacitance

d. Channel length modulation

**Solution :**https://www.youtube.com/watch?v=7kYKPLc5ujM2. Which of the following is TRUE?

a. A silicon wafer heavily doped with boron is a P

^{+}substrateb. A silicon wafer lightly doped with boron is a P

^{+}substratec. A silicon wafer heavily doped with Arsenic is a P

^{+}substrated. A silicon wafer lightly doped with Arsenic is a P

^{+}substrate**Solution :**https://www.youtube.com/watch?v=wWLqWJ5JX3U3. In the following limiter circuit, an input voltage V

_{i}= 10sin100πt applied. Assume that the diode drop is 0.7 volts when it is forward biased. The zener breakdown voltage is 6.8 volts.The maximum and minimum values of the output voltage respectively are

a. 6.1 volts, -0.7 volts

b. 0.7 volts, -7.5 volts

c. 7.5 volts, -0.7 volts

d. 7.5 volts, -7.5 volts

**Solution :**https://www.youtube.com/watch?v=2LAYX1bdh5o4. A silicon wafer has 100nm of oxide on it and is inserted in a furnace at a temperature above 1000

^{o}C for further oxidation in dry oxygen. The oxidation ratea. Is independent of current oxide thickness and temperature

b. Is independent of current oxide thickness but depends on temperature

c. Slows down as the oxide grows

d. Is zero as the existing oxide prevents further oxidation

**Solution :**https://www.youtube.com/watch?v=6yl7336P2kA5. The drain current of a MOSFET in saturation is given by I

_{D}= K(V_{GS}-V_{T})^{2}, where K is a constant. The magnitude of the Transconductance g_{m}is**Solution :**https://www.youtube.com/watch?v=pYDNlQanv2g6. For the circuit shown in the following figure, transistors M1 and M2 are identical NMOS transistors. Assume that M2 is in saturation and the output is unloaded. The I

_{X}is related to I_{bias}as**Solution :**https://www.youtube.com/watch?v=CBXqcvlx97A7. The measured Transconductance g

_{m}of an NMOS transistor operating in the linear region is plotted against the gate voltage V_{G}at constant drain voltage V_{D}. Which of the following figures represents the expected dependence of g_{m}on V_{G}?**Solution :**https://www.youtube.com/watch?v=KE_MLvt-M-48. Two identical NMOS transistors M1 and M2 are connected as shown below. V

_{bias}is chosen so that both transistors are in saturation. The equivalent g_{m}of the pair is defined to be d_{Iout}/ dV_{i}at constant V_{out}, isa. The sum of individual g

_{m}’s of the transistorsb. The product of individual g

_{m}’s of the transistorsc. Nearly equal to the g

_{m}of M1d. Nearly equal to g

_{m1}/g_{m2}of M2**Solution :**https://www.youtube.com/watch?v=oySwKD3Vtjg9. Silicon is doped with boron to a concentration of 4x10

^{17}atoms/cm^{3}. Assuming the intrinsic carrier concentration of silicon to be 1.5x10^{10}cm^{-3}and the value of KT/q to be 25 mV at 300^{o}K. Compared to undoped silicon, the Fermi level of doped silicona. Goes down by 0.13 eV

b. Goes up by 0.13 eV

c. Goes down by 0.427 eV

d. Goes up by 0.427 eV

**Solution :**https://www.youtube.com/watch?v=B4keN9lEFS810. The cross section of a JFET is shown in the figure. Let V

_{G}be -2 volts and V_{P}be the initial pinch off voltage. If the width W is doubled (with other geometric parameters and doping levels remaining the same), then the ratio between the mutual Transconductance of the initial and the modified JFET is**Solution :**https://www.youtube.com/watch?v=i1HcEXiUqXA11. Consider the following assertions.

S1: For zener effect to occur, a very abrupt junction is required

S2: For quantum tunneling to occur, a very narrow energy barrier is required.

Which of the following is correct?

a. Only S2 is true

b. Both are true but S2 is not a reason for S1

c. Both are true but S2 is a reason for S1

d. Both are false

**Solution :**https://www.youtube.com/watch?v=FMoJlAI1-84
## No comments:

## Post a Comment